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| EMIF04-MMC02F3 4 LINES EMI FILTER AND ESD PROTECTION FOR MULTIMEDIA CARD Main product characteristics: Where EMI filtering in ESD sensitive equipment is required : MultiMedia Card for mobile phones, Personal Digital Assistant, Digital Camera, MP3 players... Flip-Chip (11 bumps) Description The EMIF04-MMC02F3 is a highly integrated device designed to suppress EMI/RFI noise for MultiMedia Card ports. The EMIF04 Flip-Chip packaging means the package size is equal to the die size. This filter includes ESD protection circuitry which prevents damage to the application when subjected to ESD surges up to 15kV. Pin configuration (bump side) 3 I1 I2 I3 I4 2 O1 VD2 VD1 GND 1 A O2 O3 O4 B C D Benefits EMI symmetrical (I/O) low-pass filter High efficiency in EMI filtering Lead free package 400m pitch Compatible with high speed data rate 2 Schematic VD2 VD1 R20 R10 O1 (Data) Very low PCB space consuming: < 2 mm Very thin package: 0.60 mm High efficiency in ESD suppression R1 I1 I2 I3 I4 R4 R2 R3 O2 (CLK) O3 (CMD) O4 High reliability offered by monolithic integration High reducing of parasitic elements through integration and wafer level packaging GND Complies with the following standards: IEC61000-4-2: Level 4 15kV 8kV (air discharge) (contact discharge) Order codes Part number EMIF04-MMC02F3 Marking GP June 2005 Rev 1 1/9 www.st.com 9 1 ELECTRICAL CHARACTERISTICS (Tamb = 25C) EMIF04-MMC02F3 Table 1. Symbol VPP Tj Top Tstg Absolute maximum rating (limiting values) Parameter ESD discharge IEC61000-4-2, air discharge ESD discharge IEC61000-4-2, contact discharge Junction temperature Operating temperature range Storage temperature range Value 15 8 125 -40 to + 85 -55 to +150 Unit kV C C C 1 Symbol VBR IRM VRM VCL IPP RI/O Cline ELECTRICAL CHARACTERISTICS (Tamb = 25C) Parameter Breakdown voltage Leakage current Stand-off voltage Clamping voltage Peak pulse current Series resistance between Input & Output Input capacitance per line Symbol VBR IRM Cline R1, R2, R3, R4 R10 R20 IR = 1 mA Test conditions Min. 6 Typ. Max. Unit V VRM = +3V VLINE = 0 V, VOSC = 30 mV, F = 1MHz Tolerance 10% Tolerance 10% Tolerance 10% 100 250 20 nA pF k k 47 13 56 2/9 1 ELECTRICAL CHARACTERISTICS (Tamb = 25C) EMIF04-MMC02F3 Figure 1. S21 attentuation measurements A2 - A3 line EMIF04-MMC02F3_FREQ-RESP-MEAS_PM505 APLAC 7.91 User: ST Microelectronics Feb 02 2005 Figure 2. S21 attentuation measurements B1 -B3 line EMIF04-MMC02F3_FREQ-RESP-MEAS_PM505 APLAC 7.91 User: ST Microelectronics Feb 02 2005 0.00 dB -10.00 0.00 dB -10.00 -20.00 -20.00 -30.00 -30.00 -40.00 -40.00 -50.00 -50.00 -60.00 100.0k 1.0M Line 1 10.0M f/Hz 100.0M 1.0G -60.00 100.0k 1.0M Line 2 10.0M f/Hz 100.0M 1.0G Figure 3. S21 attentuation measurements C1 - C3 line EMIF04-MMC02F3_FREQ-RESP-MEAS_PM505 APLAC 7.91 User: ST Microelectronics Feb 02 2005 Figure 4. S21 attentuation measurements D1 - D3 line EMIF04-MMC02F3_FREQ-RESP-MEAS_PM505 APLAC 7.91 User: ST Microelectronics Feb 02 2005 0.00 dB -10.00 0.00 dB -10.00 -20.00 -20.00 -30.00 -30.00 -40.00 -40.00 -50.00 -50.00 -60.00 100.0k 1.0M Line 3 10.0M f/Hz 100.0M 1.0G -60.00 100.0k 1.0M Line 4 10.0M f/Hz 100.0M 1.0G Figure 5. 0.00 dB -10.00 -20.00 -30.00 -40.00 -50.00 -60.00 -70.00 -80.00 -90.00 -100.00 100.0k Crosstalk behaviour (A2 - B3 line) Figure 6. Line capacitance versus reverse applied voltage 25 20 CLINE(pF) 15 10 5 0 0.0 0.5 1.0 1.5 2.0 2.5 VLINE(V) 3.0 3.5 4.0 4.5 5.0 1.0M Xtalk 10.0M f/Hz 100.0M 1.0G 3/9 2 Aplac model EMIF04-MMC02F3 Figure 7. ESD response to IEC61000-4-2 (+15kV air discharge) on one input V(in) and on one output (Vout). Figure 8. ESD response to IEC61000-4-2 (-15kV air discharge) on one input V(in) and on one output (Vout) Input 10V/d Input 10V/d Output 10V/d Output 10V/d 100ns/d 100ns/d 2 Figure 9. Aplac model Device structure Rs Ls I1 O1 Ls Rs Port1 Port2 R10 Rbump Lbump VD1 Rbump Lbump VD2 R20 Rbump Lbump O1 Rbump Lbump O2 Rbump Lbump O3 Rbump Lbump O4 MODEL = demif04 MODEL = demif04 Bulk MODEL = demif04_gnd I1 Lbump Rbump Lbump Rbump R1 R2 R3 R4 I2 Lbump Rbump D2 I3 Lbump Rbump Lbump Rbump I4 Cgnd Lgnd Rgnd Bulk 4/9 3 Order code EMIF04-MMC02F3 Figure 10. Aplac model variables aplacvar R1 47 aplacvar R2 47 aplacvar R3 47 aplacvar R4 47 aplacvar R10 13k aplacvar R20 56k aplacvar Rsub 120m aplacvar Cz 16.65pF aplacvar Cz_gnd 49.95pF aplacvar RS_gnd 480m aplacvar Ls 950pH aplacvar Rs 150m aplacvar Rbump 20m aplacvar Lbump 50pH aplacvar Lgnd 250pH aplacvar Rgnd 200m aplacvar Cgnd 0.6pF Diode Demif04 BV=7 IBV=1m CJO=Cz M=0.31 RS=1 VJ=0.6 TT=100n Diode Demif04_gnd BV=7 IBV=1m CJO=Cz_gnd M=0.31 RS=RS_gnd VJ=0.6 TT=100n 3 Order code EMIF EMI Filter Number of lines Application (3 letters) and Version (2 digits) Flip Chip 3: Leadfree Pitch = 400m Bump = 255m yy - xxx zz F x 5/9 4 Package information EMIF04-MMC02F3 4 Package information Figure 11. Mechanical data 400m 40 255m 40 605m 55 400m 40 Figure 12. Foot print recommendations 185m 10 1.17mm 30m Figure 13. Marking Dot, ST logo xx = marking z = back-end location yww = datecode (y = year ww = week) Copper pad Diameter : 220m recommended Solder stencil opening : 330m recommended 1.57mm 30m E Solder mask opening recommendation : 300m recommended xxz y ww 6/9 5 Flip-chip tape and reel specification EMIF04-MMC02F3 5 Flip-chip tape and reel specification Dot identifying Pin A1 location 4 +/- 0.1 O 1.5 +/- 0.1 1.75 +/- 0.1 3.5 +/- 0.1 0.73 +/- 0.05 All dimensions in mm 8 +/- 0.3 ST E ST E ST E xxx yww User direction of unreeling xxx yww xxx yww 4 +/- 0.1 6 Ordering information Part Number EMIF04-MMC02F3 Marking GP Package Flip-Chip Weight 2.4 mg Base qty 5000 Delivery mode Tape and reel 7" Note: More information is available in the applicatioin notes: - AN1235: ''Flip-Chip: Package description and recommandations for use'' - AN1751: "EMI Filters: Recommendations and measurements" 7/9 7 Revision history EMIF04-MMC02F3 7 Revision history Date 16-Jun-2005 Revision 1 First issue Description of Changes 8/9 7 Revision history EMIF04-MMC02F3 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners (c) 2005 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 9/9 |
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